Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.406-406
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- 2016
Analysis of wet chemical tunnel oxide layer characteristics capped with phosphorous doped amorphous silicon for high efficiency crystalline Si solar cell application
- Kang, Ji-yoon (College of Information and Communication Engineering, Sungkyunkwon University) ;
- Jeon, Minhan (College of Information and Communication Engineering, Sungkyunkwon University) ;
- Oh, Donghyun (College of Information and Communication Engineering, Sungkyunkwon University) ;
- Shim, Gyeongbae (College of Information and Communication Engineering, Sungkyunkwon University) ;
- Park, Cheolmin (Department of Energy Science, Sungkyunkwon University) ;
- Ahn, Shihyun (College of Information and Communication Engineering, Sungkyunkwon University) ;
- Balaji, Nagarajan (Department of Energy Science, Sungkyunkwon University) ;
- Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwon University)
- Published : 2016.02.17
Abstract
To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about