한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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- Pages.341-341
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- 2016
Low-temperature synthesis of nc-Si/a-SiNx: H quantum dot thin films using RF/UHF high density PECVD plasmas
- Yin, Yongyi (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST), Department of advanced materials science and engineering, Sungkyunkwan University) ;
- Sahu, B.B. (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST), Department of advanced materials science and engineering, Sungkyunkwan University) ;
- Lee, J.S. (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST), Department of advanced materials science and engineering, Sungkyunkwan University) ;
- Kim, H.R. (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST), Department of advanced materials science and engineering, Sungkyunkwan University) ;
- Han, Jeon G. (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST), Department of advanced materials science and engineering, Sungkyunkwan University)
- 발행 : 2016.02.17
초록
The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature (