한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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- Pages.289.2-289.2
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- 2016
The Effects of a Thermal Annealing Process in IGZO Thin Film Transistors
- Kim, Hyeong-Jun (School of Electronic and Electrical Engineering, Sungkyunkwan University) ;
- Park, Hyung-Youl (School of Electronic and Electrical Engineering, Sungkyunkwan University) ;
- Park, Jin-Hong (School of Electronic and Electrical Engineering, Sungkyunkwan University)
- 발행 : 2016.02.17
초록
In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of