한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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- Pages.231-232
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- 2016
Non volatile memory TFT using mobile proton in gate dielectric by hydrogen neutral beam treatment
- Yun, JangWon (Center for Advanced Photonic Materials, Korea University) ;
- Jang, Jin Nyoung (Dept. of Display and Semiconductor Physics, Korea University) ;
- Hong, MunPyo (Dept. of Display and Semiconductor Physics, Korea University)
- 발행 : 2016.02.17
초록
We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.