Abstract
Photoelectrochemical water splitting is considered as a promising method of transforming solar energy into chemical energy stored in the type of hydrogen. An n-type $WO_3$ semiconductor is one of the most promising photoanodes for hydrogen production from water splitting. Films annealed at lower temperatures consisted of amorphous, whereas films annealed above $500^{\circ}C$ comprised solely of monoclinic $WO_3$. In this study, we observed photoactivity of $WO_3$ as increasing thickness of $WO_3$. And it shows good photoacivity as thickness increases. Also we tried to improve photoactivity through surface modification and bulk modification by using hydrogen treatment and conducting polymer. The photocurrent was measured in potentiostatic method with the three electrode system. A Pt wire and Ag / AgCl electrode were used as the counter electrode and the reference electrode, respectively. photocurrent-time (I-T) curve was measured at a bias potential of 0.79 V.
