Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2015.07a
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- Pages.1151-1152
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- 2015
Characterization of Silicon-Zinc-Oxide films by thermal annealing methods
열처리 방식에 따른 실리콘 산화아연 박막의 물성 분석
- Lee, Sang-Hyuk (Department of Electronic Systems Engineering, Hanyang University) ;
- Jun, Hyun-Sik (Department of Electronic Systems Engineering, Hanyang University) ;
- Park, Jin-Seok (Department of Electronic Systems Engineering, Hanyang University)
- Published : 2015.07.15
Abstract
Silicon zinc oxide (SZO) thin films were deposited via co-sputtering. Two kinds of post-treatment, furnace annealing and hot pressing, were carried out on the deposited SZO films. The effects of the post-treatment on the chemical bond and surface roughness of the deposited SZO films were analyzed as functions of the post-treatment conditions that were used. It was observed from the X-ray photoelectron spectroscopy (XPS) results that the amount of Si-O bonds in the SZO film drastically increased after the low-temperature furnace annealing. The experiment results showed that the hot pressing method would be favorable as it could improve the electrical characteristics of the SZO-TFTs.
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