대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2015년도 제46회 하계학술대회
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- Pages.1149-1150
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- 2015
Hf의 도핑에 따른 Al-Zn-O 박막의 물성 분석
Property analysis of Hafnium doped Aluminum-Zinc-Oxide films
- Lee, Sang-Hyuk (Department of Electronic Systems Engineering, Hanyang University) ;
- Jun, Hyun-Sik (Department of Electronic Systems Engineering, Hanyang University) ;
- Park, Jin-Seok (Department of Electronic Systems Engineering, Hanyang University)
- 발행 : 2015.07.15
초록
In this study, hafnium was doped into aluminum zinc oxide (AZO) films were deposited on glass and Si substrates at room temperature via co-sputtering by varying the electric power applied to the Hf target. The properties of deposited Hf-doped AZO films, such as crystalline structure, optical transmittance, and band gap were analyzed using various methods such as X-ray diffraction (XRD) and UV/visible spectrophotometer. The experimental results confirmed that the abovementioned properties of Hf-AZO films strongly depended on the Hf sputtering power.
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