EDISON SW 활용 경진대회 논문집 (Proceeding of EDISON Challenge)
- 제4회(2015년)
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- Pages.343-346
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- 2015
CMOS Inverter Design based on Double Gate Ultra-Thin Body MOSFETs
- Park, Sang Chun (Dept. of Electrical Engineering, KAIST) ;
- Ahn, Yongsoo (Dept. of Electrical Engineering, KAIST)
- 발행 : 2015.03.19
초록
Ultra-thin body transistor is one of the emerging devices since it control leakage current flows through substrate. In addition, it can be operated by double gates, thus, its on/off current ratio is higher than conventional counterpart. In this paper, we design and investigate a CMOS inverter based on ultra-thin body MOSFETs to estimate its performance in real application. NEGF (non-equilibrium Green's function) method is used to obatain relationship between drain current and voltage. DC transfer is extracted from the relationship, and FO4 (fanout-of-4) propagation delay is reported as 5.1 ps estimated by a simple model.
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