Layer Controlled Synthesis of Graphene using Two-Step Growth Process

  • Han, Jaehyun (School of Integrated Technology, College of Engineering, Yonsei University, Yonsei Institute of Convergence Technology) ;
  • Yeo, Jong-Souk (School of Integrated Technology, College of Engineering, Yonsei University, Yonsei Institute of Convergence Technology)
  • 발행 : 2015.08.24

초록

Graphene is very interesting 2 dimensional material providing unique properties. Especially, graphene has been investigated as a stretchable and transparent conductor due to its high mobility, high optical transmittance, and outstanding mechanical properties. On the contrary, high sheet resistance of extremely thin monolayer graphene limits its application. Artificially stacked multilayer graphene is used to decrease its sheet resistance and has shown improved results. However, stacked multilayer graphene requires repetitive and unnecessary transfer processes. Recently, growth of multilayer graphene has been investigated using a chemical vapor deposition (CVD) method but the layer controlled synthesis of multilayer graphene has shown challenges. In this paper, we demonstrate controlled growth of multilayer graphene using a two-step process with multi heating zone low pressure CVD. The produced graphene samples are characterized by optical microscope (OM) and scanning electron microscopy (SEM). Raman spectroscopy is used to distinguish a number of layers in the multilayer graphene. Its optical and electrical properties are also analyzed by UV-Vis spectrophotometer and probe station, respectively. Atomic resolution images of graphene layers are observed by high resolution transmission electron microscopy (HRTEM).

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