한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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- Pages.122.1-122.1
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- 2015
Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films
- Denny, Yus Rama (Department of Electrical Engineering, University of Sultan AgengTirtayasa) ;
- Firmansyah, Teguh (Department of Electrical Engineering, University of Sultan AgengTirtayasa) ;
- Park, Chanae (Department of Physics, Chungbuk National University) ;
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Kang, Hee Jae
(Department of Physics, Chungbuk National University)
;
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Yang, Dong-Seok
(Department of Physics Education, Chungbuk National University)
;
- Heo, Sung (Analytical Engineering Center, Samsung Advanced Institute of Technology) ;
- Chung, Jae Gwan (Analytical Engineering Center, Samsung Advanced Institute of Technology) ;
- Lee, Jae Cheol (Analytical Engineering Center, Samsung Advanced Institute of Technology)
- 발행 : 2015.08.24
초록
The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta1+, Ta2+, Ta3+, Ta4+, and Ta5+, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. The REELS spectra suggested the decrease of band gap for tantalum oxide thin films with increasing oxygen deficiency. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.