Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2015.08a
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- Pages.119-119
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- 2015
Applications of Ar Gas Cluster Ion Beam Sputtering to Ta2O5 thin films on SiO2/Si (100)
- Park, Chanae (Department of Physics, Chungbuk National University) ;
- Chae, HongChol (Center for Research facility, Chungbuk National University) ;
- Kang, Hee Jae (Department of Physics, Chungbuk National University)
- Published : 2015.08.24
Abstract
Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a
Keywords
- Ion Beam Sputtering;
- Gas Cluster Ion Beam Sputtering;
- GCIB sputtering;
- Oxide thin films;
- $Ta_2O_5$;
- XPS