한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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- Pages.464.1-464.1
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- 2014
Electrical Characterization of Cu(InxGa1-x)(SySe2-y) Thin Film Solar Cells
- Kim, Dahye (Department of Physics, Ewha Womans University) ;
- Kim, Ji Eun (Department of Physics, Ewha Womans University) ;
- Cho, Yunae (Department of Physics, Ewha Womans University) ;
- Kim, Dong-Wook (Department of Physics, Ewha Womans University)
- 발행 : 2014.02.10
초록
Among numerous material candidates, Cu(InxGa1-x)(SySe2-y) (CIGS) thin films have emerged as promising material candidates for thin film solar cell applications due to the high energy conversion efficiency and relatively low fabrication cost. The CIGS thin film solar cells consist of several materials, including Mo back contacts, ZnO-based window layers, and CdS buffer layers. All these materials have different crystal structures and contain quite distinct chemical elements, and hence the device characterization requires careful analyses. Most of all, identification of the major trap states resulting in the carrier recombination processes is a key step toward realization of high efficiency CIGS solar cells. We have carried out electrical investigations of CIGS thin film solar cells to specify the major trap states and their roles in photovoltaic performance. In particular, we have used the temperature-dependent transport characterizations and admittance spectroscopy. In this presentation, we will introduce some exemplary studies of DC and AC electrical characteristics of the CIGS solar cells.