The Effects of O2 Plasma Treatment on Electrical Properties of Graphene Grown by Chemical Vapor Deposition

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.