Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.378.1-378.1
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- 2014
Effect of Non-lattice Oxygen Concentration and Micro-structure on Resistance Switching Characteristics in Nb-doped HfO2 by DC Magnetron Co-Sputtering
Abstract
In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at