Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.373-373
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- 2014
Microwave Annealing in Ag/HfO2/Pt Structured ReRAM Device
- Kim, Jang-Han (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Kim, Hong-Ki (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Jang, Ki-Hyun (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Bae, Tae-Eon (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
- Published : 2014.02.10
Abstract
Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2,