Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
- /
- Pages.339.1-339.1
- /
- 2014
Characteristic of Lower Hydrogenated Oxide Films Deposited by the Higher Energy Assisting Deposition Systems Using the with Precursor Siloxane Species
- Kim, J. (Research & Develment, TES Co., Ltd.) ;
- Yang, J. (Research & Develment, TES Co., Ltd.) ;
- Park, G. (Research & Develment, TES Co., Ltd.) ;
- Hur, G. (Research & Develment, TES Co., Ltd.) ;
- Lee, J. (Research & Develment, TES Co., Ltd.) ;
- Ban, W. (Department of Physics, Sungkyunkwan University) ;
- Jung, D. (Department of Physics, Sungkyunkwan University)
- Published : 2014.02.10
Abstract
In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of
Keywords
- higher energy assisting deposition;
- low temperature;
- lower hydrogenated oxide;
- secondary ion mass spectroscopy