Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.175.1-175.1
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- 2014
A Study of Long Range Band Bending Effect on the Ge(001) Surface by STM
- Published : 2014.02.10
Abstract
Despite growing interest in Ge as a possible alternative to Si, reliable data on Ge surface has been relatively scarce. Using low temperature scanning tunneling microscopy (STM), we investigate band-bending effects of localized charge traps at Ge(001) surface at 78 K. For this investigation, we prepared nearly defect-free Ge(001) surface by keeping the background pressure to <