Proceedings of the KIPE Conference (전력전자학회:학술대회논문집)
- 2013.11a
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- Pages.89-90
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- 2013
SiC MOSFET Compared to Si Power Devices during Short Circuit Test
실리콘 카바이드와 실리콘 MOSFET의 단락회로 특성비교
- Nguyen, Thanh That (Power Electronic Lab, Department of Electrical Engineering, Soongsil University) ;
- Ashraf, Ahmed (Power Electronic Lab, Department of Electrical Engineering, Soongsil University) ;
- Park, Joung Hu (Power Electronic Lab, Department of Electrical Engineering, Soongsil University)
- Published : 2013.11.15
Abstract
Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.
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