Growth Behavior of Ga-Doped ZnO Thin Films on Au/SiNx/Si(001) Substrate Grown by RF Sputtering

  • 김주현 (조선대학교 신소재공학과) ;
  • 이무성 (조선대학교 신소재공학과) ;
  • 강현철 (조선대학교 신소재공학과)
  • 발행 : 2013.02.18

초록

This paper reports the synthesis and characterization of ZnO:Ga nano-structures deposited on Au/SiNx/Si(001) by radio-frequency sputtering. The effect of the temperature on the microstructure of the as-grown ZnO:Ga thin films was examined. The growth mode of ZnO:Ga nano-structures can be explained by the profile coating, i.e. the ZnO nano-structures were formed with a morphological replica of Au seeds. Initially, the ZnO:Ga nano-structures were overgrown on top of Au nano-crystals. Small ZnO:Ga nano-dots were then nucleated on hexagonal ZnO:Ga discs.

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