한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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- Pages.319-319
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- 2013
BST Thin Film Multi-Layer Capacitors
- Choi, Woo Sung (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
- Kang, Min-Gyu (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
- Ju, Byeong-Kwon (Display and Nanosystem Laboratory, College of Engineering, Korea University) ;
- Yoon, Seok-Jin (Research Planning & Coordination Division, Korea Institute of Science and Technology) ;
- Kang, Chong-Yun (Electronic Materials Research Center, Korea Institute of Science and Technology)
- Published : 2013.02.18
Abstract
Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/