한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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- Pages.311-311
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- 2013
Electrical Properties of Metal-Oxide Quantum dot Hybrid Resistance Memory after 0.2-MeV-electron Beam Irradiation
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Lee, Dong Uk
(Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
- Kim, Dongwook (Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
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Kim, Eun Kyu
(Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
- Pak, Hyung Dal (Radiation Instrumentation Research Division, Korea Atomic Energy Research Institute) ;
- Lee, Byung Cheol (Radiation Instrumentation Research Division, Korea Atomic Energy Research Institute)
- 발행 : 2013.02.18
초록
The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure