Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.02a
- /
- Pages.230-230
- /
- 2013
High-Efficiency a-Si:H Solar Cell Using In-Situ Plasma Treatment
- Han, Seung Hee (Photo-Electronic Hybrids Research Center, National Agenda Research Division Korea Instituteof Science and Technology) ;
- Moon, Sun-Woo (Photo-Electronic Hybrids Research Center, National Agenda Research Division Korea Instituteof Science and Technology) ;
- Kim, Kyunghun (Photo-Electronic Hybrids Research Center, National Agenda Research Division Korea Instituteof Science and Technology) ;
- Kim, Sung Min (Photo-Electronic Hybrids Research Center, National Agenda Research Division Korea Instituteof Science and Technology) ;
- Jang, Jinhyeok (Photo-Electronic Hybrids Research Center, National Agenda Research Division Korea Instituteof Science and Technology) ;
- Lee, Seungmin (Photo-Electronic Hybrids Research Center, National Agenda Research Division Korea Instituteof Science and Technology) ;
- Kim, Jungsu (Photo-Electronic Hybrids Research Center, National Agenda Research Division Korea Instituteof Science and Technology)
- Published : 2013.02.18
Abstract
In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2