Mn Thin Film on $BaTiO_3$ Substrate: Modified Electrical and Magnetic Properties

  • Tuan, Duong Anh (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan) ;
  • Cuong, Tran Viet (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan) ;
  • Shin, Yooleemi (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan) ;
  • Cho, Sunglae (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
  • Published : 2013.02.18

Abstract

Magnetic properties of 3d transition metals were determined by exchange interaction between magnetic ions that was characterized by the exchange integral. Bulk Mn material is one of transition metals that have been well known as an anti-ferromagnetic material due to an anti-parallel spin with negative exchange integral. Here we report on the MBE growth of Mn on $BaTiO_3$ (001) substrate and induced ferromagnetism. The bcc ${\alpha}$-Mn single crystal film has been grown on $BaTiO_3$ (100) substrate. The XRD and Raman results indicated that the structural phase transitions of $BaTiO_3$ substrate induced a lattice distortion at the interface. Consequently, the grown Mn film exhibits ferromagnetism with strong saturation magnetization of 495 emu/$cm^3$ at 320 K. The electrical resistivity of the Mn film strongly depended on the crystal structure of $BaTiO_3$ substrate.

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