한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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- Pages.320.1-320.1
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- 2013
The $Al_2O_3$ Passivation Mechanism for c-Si Surface Deposited by ALD Using $O_3$ Oxidant
- 발행 : 2013.08.21
초록
We have investigated the effect of surface passivation for crystalline silicon solar cell using ozone-based atomic layer deposited (ALD)
키워드