한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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- Pages.240.2-240.2
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- 2013
Memory Effect of $In_2O_3$ Quantum Dots and Graphene in $SiO_2$ thin Film
- Lee, Dong Uk (Quantum-Function Research Lab. and Department of Physics, Hanyang University) ;
- Sim, Seong Min (Quantum-Function Research Lab. and Department of Physics, Hanyang University) ;
- So, Joon Sub (Quantum-Function Research Lab. and Department of Physics, Hanyang University) ;
- Kim, Eun Kyu (Quantum-Function Research Lab. and Department of Physics, Hanyang University)
- 발행 : 2013.08.21
초록
The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to