Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.08a
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- Pages.239-239
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- 2013
Super Coupling Dual-gate Ion-Sensitive Field-Effect Transistors
- Jang, Hyun-June (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
- Published : 2013.08.21
Abstract
For more than four decades, ion-sensitive field-effect transistor (ISFET) sensors that respond to the change of surface potential on a membrane have been intensively investigated in the chemical, environmental, and biological spheres, because of their potential, in particular their compatibility with CMOS manufacturing technology. Here, we demonstrate a new type of ISFET with dual-gate (DG) structure fabricated on ultra-thin body (UTB), which highly boosts sensitivity, as well as enhancing chemical stability. The classic ion-sensitive field-effect transistor (ISFET) has been confronted with chronic problems; the Nernstian response, and detection limit with in the Debye length. The super-coupling effects imposed on the ultra thin film serve to not only maximize sensitivity of the DG ISFET, but also to strongly suppress its leakage currents, leading to a better chemical stability. This geometry will allow the ISFET based biosensor platform to continue enhancement into the next decade.