한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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- Pages.237.2-237.2
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- 2013
Improved Uniformity in Resistive Switching Characteristics of GeSe Thin Film by Ag Nanocrystals
- Park, Ye-Na (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Shin, Tae-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Lee, Hyun-Jin (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Lee, Ji-Soo (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Jeong, Yong-Ki (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Ahn, So-Hyun (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Lee, On-You (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Kim, Jang-Han (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Nam, Ki-Hyun (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
- 발행 : 2013.08.21
초록
ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.