High Speed Etching for Saw Damage Removal Using by RF DBD

  • 고민국 (제주대학교 에너지공학과) ;
  • 양종근 (제주대학교 에너지공학과) ;
  • 이헌주 (제주대학교 에너지공학과)
  • Published : 2013.08.21

Abstract

6" Multi-crystal Silicon wafer has etched suing a remote - type RF Dielectric barrier discharge (RF DBD) at atmospheric pressure. DBD source is composed of Al electrode and coated Al2O3 dielectric as function of Ar/NF3 gas combination and input power used 13.56 MHz power supply. Ar gas flow rate is changed from 2 to 10 Slm, and NF3 flow rate is changed from 0.2~1 slm. At the result, NF3 flow rate Si etching rate also increase whit the increasing of NF3 flow rate But at 2 slm etching rate was decrease. In this experience, Max etching rate is 2.3 ${\mu}m/min$ when the scan time is 45 sec.

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