Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.08a
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- Pages.97-97
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- 2013
Cu2ZnSn(S,Se)4 Thin Film Solar Cells Fabricated by Sulfurization of Stacked Precursors Prepared Using Sputtering Process
- Gang, Myeng Gil (Chonnam National University) ;
- Shin, Seung Wook (KAIST) ;
- Lee, Jeong Yong (KAIST) ;
- Kim, Jin Hyeok (Chonnam National University)
- Published : 2013.08.21
Abstract
Recently, Cu2ZnSn(S,Se)4 (CZTSS), which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTSS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104 cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTSS based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. I will briefly overview the recent technological development of CZTSS thin film solar cells and then introduce our research results mainly related to sputter based process. CZTSS thin film solar cells are prepared by sulfurization of stacked both metallic and sulfide precursors. Sulfurization process was performed in both furnace annealing system and rapid thermal processing system using S powder as well as 5% diluted H2S gas source at various annealing temperatures ranging from