Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.465-465
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- 2012
Gas Barrier Properties of Nanolaminated Single Inorganic Film Deposited by Neutral Beam Assisted Sputtering Process
- Jang, Yun-Sung (Dept. of Display Semiconductor Physics, Korea University) ;
- Lee, You-Jong (Dept. of Display Semiconductor Physics, Korea University) ;
- Hong, Mun-Pyo (Dept. of Display Semiconductor Physics, Korea University)
- Published : 2012.02.08
Abstract
In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.