Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.288-288
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- 2012
Effect of Metallic Tungsten Concentration on Resistance Switching Behavior of Sputtered W-doped NbOx Films
- Published : 2012.02.08
Abstract
In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at