Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2011.08a
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- Pages.254-254
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- 2011
Photo-induced Electrical Properties of Metal-oxide Nanocrystal Memory Devices
- Lee, Dong-Uk (Quantum-Function Research Lab. and Department of Physics, Hanyang University) ;
- Cho, Seong-Gook (Quantum-Function Research Lab. and Department of Physics, Hanyang University) ;
- Kim, Eun-Kyu (Quantum-Function Research Lab. and Department of Physics, Hanyang University) ;
- Kim, Young-Ho (Division of Materials Science and Engineering, Hanyang University)
- Published : 2011.08.17
Abstract
The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with