대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2011년도 제42회 하계학술대회
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- Pages.1412-1413
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- 2011
수소화된 산화아연을 이용한 박막 트랜지스터의 제작 및 열처리 효과
Characterization of thin film transistors using hydrogenated ZnO films and effects of thermal annealing
- 이상혁 (한양대학교 전자전기제어계측공학과) ;
- 김원 (한양대학교 전자전기제어계측공학과) ;
- 엄현석 (한양대학교 전자전기제어계측공학과) ;
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박진석
(한양대학교 전자전기제어계측공학과)
- Lee, Sang-Hyuk (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
- Kim, Won (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
- Uhm, Hyun-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
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Park, Jin-Seok
(Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
- 발행 : 2011.07.20
초록
Effects of thermal annealing on electrical characteristics of thin film transistors (TFTs) using hydrogenated zinc oxide (ZnO:H) films as active channel were extensively investigated. The ZnO:H films were deposited at room temperature by RF sputtering. The device parameters of the ZnO:H-based TFTs, such as threshold voltage (
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