대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2011년도 제42회 하계학술대회
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- Pages.25-26
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- 2011
열처리 공정에 따른 산화물 박막 트랜지스터의 전기적 특성에 관한 연구
The study on the electrical characteristics of oxide thin film transistors with different annealing processes
- Park, Yu-Jin (Department of Chemical and Biochemical Engineering, Dongguk University-Seoul) ;
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Oh, Min-Suk
(Flexible Display Research Center, Korea Electronics Technology Institute (KETI)) ;
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Han, Jeong-In
(Department of Chemical and Biochemical Engineering, Dongguk University-Seoul)
- 발행 : 2011.07.20
초록
In this paper, we investigated the effect of various annealing processes on the electrical characteristics of oxide thin film transistors (TFTs). When we annealed the TFT devices before and after source/drain (S/D) process, we could observe the different electrical characteristics of oxide TFTs. When we annealed the TFTs after deposition of transparent indium zinc oxide S/D electrodes, the annealing process decreased the contact resistance but increased the resistivity of S/D electrodes. The field effect mobility, subthreshold slope and threshold voltage of the oxide TFTs annealed before and after S/D process were 5.83 and 4.47
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