대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

열처리 공정에 따른 산화물 박막 트랜지스터의 전기적 특성에 관한 연구

The study on the electrical characteristics of oxide thin film transistors with different annealing processes

  • 박유진 (동국대학교 화공생물공학과) ;
  • 오민석 (전자부품연구원 플렉서블디스플레이연구센터) ;
  • 한정인 (동국대학교 화공생물공학과)
  • Park, Yu-Jin (Department of Chemical and Biochemical Engineering, Dongguk University-Seoul) ;
  • Oh, Min-Suk (Flexible Display Research Center, Korea Electronics Technology Institute (KETI)) ;
  • Han, Jeong-In (Department of Chemical and Biochemical Engineering, Dongguk University-Seoul)
  • 발행 : 2011.07.20
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초록

In this paper, we investigated the effect of various annealing processes on the electrical characteristics of oxide thin film transistors (TFTs). When we annealed the TFT devices before and after source/drain (S/D) process, we could observe the different electrical characteristics of oxide TFTs. When we annealed the TFTs after deposition of transparent indium zinc oxide S/D electrodes, the annealing process decreased the contact resistance but increased the resistivity of S/D electrodes. The field effect mobility, subthreshold slope and threshold voltage of the oxide TFTs annealed before and after S/D process were 5.83 and 4.47 $cm^2$/Vs, 1.20 and 0.82 V/dec, and 3.92 and 8.33 V respectively. To analyze the differences, we measured the contact resistances and the carrier concentrations using transfer length method (TLM) and Hall measurement.

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