Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2011.10a
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- Pages.25.2-25.2
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- 2011
Improvement of Electrical Properties by Controlling Nickel Plating Temperatures for All Solid Alumina Capacitors
- Jeong, Myung-Sun (Future Convergence Technology Research Division, Korea Institute of Science and Technology) ;
- Ju, Byeong-Kwon (Display and Nanosystem Laboratory, College of Engineering, Korea University) ;
- Oh, Young-Jei (Future Convergence Technology Research Division, Korea Institute of Science and Technology) ;
- Lee, Jeon-Kook (Future Convergence Technology Research Division, Korea Institute of Science and Technology)
- Published : 2011.10.27
Abstract
Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).