한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2011년도 추계학술발표대회
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- Pages.16.2-16.2
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- 2011
Synthesis of High-quality Graphene by Inductively-coupled Plasma-enhanced Chemical Vapor Deposition
- Lam, Van Nang (Department of Materials Science & Engineering, Chungnam National University) ;
- Kumar, Challa Kiran (Department of Materials Science & Engineering, Chungnam National University) ;
- Park, Nam-Kyu (Department of Materials Science & Engineering, Chungnam National University) ;
- Arepalli, Vinaya Kumar (Department of Materials Science & Engineering, Chungnam National University) ;
- Kim, Eui-Tae (Department of Materials Science & Engineering, Chungnam National University)
- 발행 : 2011.10.27
초록
Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on