Comparative Study on Various Memristor Models

Memristors have been studied for many years due to better scalability than DRAMs and FLASH memories thus they are considered now as a strong candidate for future memories. To describe the electrical behavior of memristors, various memristor models have been developed. Especially, many kinds of window function have been used to express the non-linearity of memristors which are thought to cause different voltage-current relationships in memristors. In this paper, the previous memristor models with different window functions are compared and analyzed. This comparative study can be very useful in not only understanding the diversity in memristor's electrical behaviors but also developing memristor circuits. This work was financially supported by the SRC/ERC program of MOST/KOSEF (R11-2005-048-00000-0). The CAD tools were supported by the IC Design Education Center (IDEC), Korea.