한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2011년도 제40회 동계학술대회 초록집
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- Pages.301-301
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- 2011
New Self-Directed Growth Mechanism of Molecular Lines across the Dimer Rows on H-terminated Si(001) Surface
- Choi, Jin-Ho (Department of Physics, Hanyang University) ;
- Cho, Jun-Hyung (Department of Physics, Hanyang University)
- 발행 : 2011.02.09
초록
We present theoretical investigations of the self-assembled growth of one-dimensional (1D) molecular lines directed across the dimer rows on the H-terminated Si(001) surface [1]. Based on density-functional theory calculations, a new growth mechanism of the 1D acetylacetone line is proposed [2], which involves the radical chain reaction initiated at two dangling-bond sites on one side of two adjacent Si dimers. It is also enabled that, if an H-free Si dimer were employed as the initial reaction site, a 1D acetylacetone line can grow along the dimer row. Our findings represent the first insight into the growth of 1D molecular lines not only across but also along the dimer rows on the H-terminated Si(001) surface.