한국정보통신학회:학술대회논문집 (Proceedings of the Korean Institute of Information and Commucation Sciences Conference)
- 한국해양정보통신학회 2011년도 춘계학술대회
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- Pages.696-698
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- 2011
질소 주입된 산화아연 박막을 사용한 박막 음향 공진 소자 연구
FBAR devices employing the ZnO:N films
- Lee, Eun-Ju (Korea Advanced Institute of Science and Technology) ;
- Zhang, Ruirui (Korea Advanced Institute of Science and Technology) ;
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Yoon, Gi-Wan
(Korea Advanced Institute of Science and Technology)
- 발행 : 2011.05.26
초록
박막 벌크 음향 공진 소자 (Film Bulk Acoustic Resonator, FBAR) 기술은 현 실리콘 공정 기술과 호환되며 차세대 초소형 RF소자 구현을 가능하게 하는 기술로 각광받아 오고 있다. FBAR 소자 제작 시 박막 증착에 RF 스퍼터링 (sputtering) 방식을 이용하는 경우 산소 (
We present a new method for the fabrication of film bulk acoustic wave resonator (FBAR) devices that exploits the thin piezoelectric ZnO films particularly sputter-deposited in a mixture of N2O and Ar gases as the reactive and sputtering gases, respectively. Some thermal annealing treatments were performed on the as-deposited ZnO films and also their effects on the resonance characteristics of the FBAR devices were investigated. It was found that with an optimized process, the resonance characteristics of the fabricated FBAR devices could be further improved.