Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.08a
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- Pages.259-259
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- 2010
Growth and characterization of periodically polarity-inverted ZnO structures grown on Cr-compound buffer layers
- Park, J.S. (Department of Materials Science and Engineering Seoul National University) ;
- Goto, T. (Center for Interdisciplinary Research, Tohoku University) ;
- Hong, S.K. (Department of Nano Information Systems Engineering, Chungnam University) ;
- Chang, J.H. ;
- Yoon, E. (Department of Materials Science and Engineering Seoul National University) ;
- Yao, T. (Department of Materials Science and Engineering Seoul National University)
- Published : 2010.08.18
Abstract
Periodically polarity inverted (PPI) ZnO structures on (0001) Al2O3 substrates are demonstrated by plasmas assisted molecular beam epitaxy. The patterning and re-growth methods are used to realize the PPI ZnO by employing the polarity controlling method. For the in-situ polarity controlling of ZnO films, Cr-compound buffer layers are used.[1, 2] The region with the CrN intermediate layer and the region with the Cr2O3 and Al2O3 substrate were used to grow the Zn- and O-polar ZnO films, respectively. The growth behaviors with anisotropic properties of PPI ZnO heterostructures are investigated. The periodical polarity inversion is evaluated by contrast images of piezo-response microscopy. Structural and optical interface properties of PPI ZnO are investigated by the transmission electron microcopy (TEM) and micro photoluminescence (
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