Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.08a
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- Pages.237-237
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- 2010
The effect of Cu flux variation on 3 stage process in the CIGS thin films
- Jo, Hyun-Jun (Public & Original Technology Research Center, DGIST) ;
- Bae, In-Ho (Department of physics, Yeungnam University) ;
- Leem, Myoung-Kun (Public & Original Technology Research Center, DGIST) ;
- Sung, Shi-Joon (Public & Original Technology Research Center, DGIST) ;
- Kang, Jin-Kyu (Public & Original Technology Research Center, DGIST) ;
- Kim, Dae-Hwan (Public & Original Technology Research Center, DGIST)
- Published : 2010.08.18
Abstract
We investigated physical properties of CuIn1-xGaxSe2 thin films grown by co-evaporator under various Cu environments. To study the effect of the Cu environments on absorber layer properties, thin films were fabricated under various reaction periods for different Cu flux on 2 stage process. We find the structural and electrical characteristics were affected by the reaction period on 2 stage process. The correlation between Cu flux variation on 2 stage process and solar cell performance was studied. The structural and electrical properties for various Cu flux were discussed.
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