Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.08a
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- Pages.149-149
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- 2010
Determination of temperature and flux variations during ultra-thin InGaN quantum well growth on a 2" wafer for GaN Green LED
- Published : 2010.08.18
Abstract
The origin of the inhomogeneous distribution of photoluminescence (PL) peak wavelength on a commercial 2" GaN wafer for green light emitting diode has been investigated by wide momentum transfer (Q) range x-ray diffraction (XRD) profile of InGaN/GaN multiple quantum wells. Near the GaN (0004) Bragg peak, wide-Q range XRD (
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