COMPUTATIONAL ANALYSIS FOR IMPROVING UNIFORMITY OF $SNO_2$ THIN FILM DEPOSITION IN AN APCVD SYSTEM

$SnO_2$ 박막증착을 위한 APCVD Reactor 내 유량 균일도 향상에 대한 수치 해석적 연구

  • 박준우 (홍익대학교 대학원 기계공학과) ;
  • 윤익로 (홍익대학교 대학원 기계공학과) ;
  • 정하승 (홍익대학교 기계시스템디자인공학과) ;
  • 신승원 (홍익대학교 기계시스템디자인공학과) ;
  • 박승호 (홍익대학교 기계시스템디자인공학과) ;
  • 김형준 ((주) 비아트론)
  • Published : 2010.05.13

Abstract

With continuously increasing flat panel display size, uniformity of thin film deposition has been drawing more attentions and associated fabrication methodologies are being actively investigated. Since the convective flow field of mixture gas plays a significant role for deposition characteristics of thin film in an APCVD system, it is greatly important to maintain uniform distribution and consistent concentration of mixture gas species. In this paper, computational study has been performed for the improvement of flow uniformity of mixture gas in an APCVD reactor during thin film deposition process. A diffuser slit has bee designed to spread the locally concentrated gas flow exiting from the flow distributor. A uniform flow distributor has been developed which has less dependency on operating conditions for global flow uniformity

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