한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.148-148
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- 2010
Substrate 물질에 따른 a-IGZO TFT의 온도 특성
Characteristics of a-IGZO TFT by the material of substrate and temperature
- Lee, Myeong-Eon (School of information & communication engineering Sungkyunkwan University) ;
- Jeong, Han-Wook (School of information & communication engineering Sungkyunkwan University) ;
- Park, Hyun-Ho (School of information & communication engineering Sungkyunkwan University) ;
- Choi, Byung-Duk (School of information & communication engineering Sungkyunkwan University)
- 발행 : 2010.06.16
초록
Measuring the a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. Characteristic change is dependant on a material of the substrate at the temperature from