Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.122-122
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- 2010
Optimal switching method of SI-Thyristor using internal impedance evaluation
SI-Thyristor의 내부 임피던스 계산을 통한 최적 스위칭 제어
- Ju, Heung-Jin (Hanyang University) ;
- Kim, Bong-Seok (Hanyang University) ;
- Hwang, Hwui-Dong (Hanyang University) ;
- Park, Jeong-Ho (Hanyang University) ;
- Ko, Kwang-Cheol (Hanyang University)
- Published : 2010.06.16
Abstract
A Static Induction Thyristor (SI-Thyristor) has a great potential as power semiconductor switch for pulsed power or high voltage applications with fast turn-on switching time and high switching stress endurance (di/dt, dV/dt). However, due to direct commutation between gate driver and SI-Thyristor, it is difficult to design optimal gate driver at the aspect of impedance matching for fast gate current driving into internal SI-Thyristor. Thus, to penetrate fast positive gate current into steady off state of the SI-Thyristor, it is proposed and proceeded the internal impedance calculation of the SI-Thyristor at steady off state with the gate driver while switching conditions that are indicated applied gate voltage,