한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2009년도 제38회 동계학술대회 초록집
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- Pages.464-464
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- 2010
Virtual Metrology for predicting $SiO_2$ Etch Rate Using Optical Emission Spectroscopy Data
- Kim, Boom-Soo (Department of Electronic Engineering, Myongji University) ;
- Kang, Tae-Yoon (Department of Electronic Engineering, Myongji University) ;
- Chun, Sang-Hyun (Department of Electronic Engineering, Myongji University) ;
- Son, Seung-Nam (Department of Electronic Engineering, Myongji University) ;
- Hong, Sang-Jeen (Department of Electronic Engineering, Myongji University)
- 발행 : 2010.02.17
초록
A few years ago, for maintaining high stability and production yield of production equipment in a semiconductor fab, on-line monitoring of wafers is required, so that semiconductor manufacturers are investigating a software based process controlling scheme known as virtual metrology (VM). As semiconductor technology develops, the cost of fabrication tool/facility has reached its budget limit, and reducing metrology cost can obviously help to keep semiconductor manufacturing cost. By virtue of prediction, VM enables wafer-level control (or even down to site level), reduces within-lot variability, and increases process capability,
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