Growth of the single and epitaxial MgO film on Fe(001)

  • Kim, Hi-Dong (Department of Physics and Institute of Photonics and Information Technology, Chonbuk National University) ;
  • Dugerjav, Otgonbayar (Department of Physics and Institute of Photonics and Information Technology, Chonbuk National University) ;
  • Seo, Jae-M. (Department of Physics and Institute of Photonics and Information Technology, Chonbuk National University)
  • 발행 : 2010.02.17

초록

The epitaxial growth of MgO film on Fe(001) has been investigated by scanning tunneling microscopy (STM). After confirming the clean Fe(001)-c($2{\times}2$) substrate by STM, Mg was deposited at room temperature (RT) under $O_2$ partial pressure of $10^{-7}\;Torr$. The MgO was grown as clusters, not as an epilayer even after postannealing at $400^{\circ}C$, as shown in Figure (a). On the contrary, when Mg was deposited on Fe(001)-c($2{\times}2$) at RT and post-oxidized through exposing $O_2$ at partial pressure $10^{-7}\;Torr$, the thin-layered film with some clusters was formed. Extended-annealing at $400^{\circ}C$ reduced the cluster density, and finally the single and epitaxial MgO-c($2{\times}2$) film was formed on Fe(001)-c($2{\times}2$) as shown in Figure (b). This ultrathin MgO film formed on Fe is expected to be applied to many technological applications, such as catalysis, microelectronics, and magnetic devices.

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