Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.213-213
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- 2010
High density plasma etching of MgO thin films in $Cl_2$ /Ar gases
- Xiao, Y.B. (Department of Chemical Engineering, Inha University) ;
- Kim, E.H. (Department of Chemical Engineering, Inha University) ;
- Kong, S.M. (Department of Chemical Engineering, Inha University) ;
- Chung, C.W. (Department of Chemical Engineering, Inha University)
- Published : 2010.02.17
Abstract
Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of
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