한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2009년도 제38회 동계학술대회 초록집
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- Pages.9-10
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- 2010
Graphene formation on 3C-SiC ultrathin film on Si substrates
- Miyamoto, Yu (Research Institute of Electrical Communication, Tohoku University) ;
- Handa, Hiroyuki (Research Institute of Electrical Communication, Tohoku University) ;
- Fukidome, Hirokazu (Research Institute of Electrical Communication, Tohoku University) ;
- Suemitsu, Maki (Research Institute of Electrical Communication, Tohoku University)
- 발행 : 2010.02.17
초록
Since the discovery of graphene by mechanical exfoliation from graphite[1], various fabrication methods are available today such as chemical exfoliation, epitaxial graphene on SiC substrates, etc. In view of industrialization, the mechanical exfoliation method may not be an option. Epitaxial graphene on SiC substrates, in this respect, is by far more practical because the method consists of conventional thermal treatments familiar to semiconductor industry. Still, the use of the SiC substrate itself, and hence the incompatibility with the Si technology, lessens the importance of this technology in its future industrialization. In this context, we have tackled the problem of forming graphene on Si substrates (GOS). Our strategy is to form an ultrathin (~80 nm) SiC layer on top of a Si substrate, and to graphitize the top SiC layers by a vacuum annealing. We have actually succeeded in forming the GOS structure [2,3,4]. Raman-scattering microscopy indicates presence of few-layer graphene (FLG) formed on our annealed SiC/Si heterostructure, with the G (
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