A Study on the Fabrication and Characterization of Particle based CIGS Thin Film with Copper rate, Selenium rate and Selenization

Copper, Selenium 비율 및 Selenization에 따른 입자기반 CIGS 박막의 제조 및 특성에 관한 연구

  • 함창우 (한국전자통신연구원/융합원천기술연구팀) ;
  • 송기봉 (한국전자통신연구원/융합원천기술연구팀) ;
  • 서정대 (한국전자통신연구원/융합원천기술연구팀) ;
  • 안세진 (한국에너지기술연구원/태양전지연구센터) ;
  • 윤재호 (한국에너지기술연구원/태양전지연구센터) ;
  • 윤경훈 (한국에너지기술연구원/태양전지연구센터)
  • Published : 2009.06.25

Abstract

We have prepared and characterized particle based CIGS thin films using a thermal evaporator. As the copper rate, selenium rate changed, CIGS particles were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS thin films were deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

Keywords